BRADBURY-NIELSEN GATE AND METHOD OF FABRICATING SAME
摘要
A Bradbury-Nielsen gate structure configured with a crystalline semiconducting layer and a plurality of free standing, spaced apart interdigitated electrodes formed atop the crystalline semiconducting layer is disclosed.
申请公布号
WO2004097879(A3)
申请公布日期
2005.05.12
申请号
WO2004US13048
申请日期
2004.04.28
申请人
THE JOHNS HOPKINS UNIVERSITY;CHARLES, HARRY, K., JR.;FRANCOMACARO, ARTHUR, S.;EDWARDS, RICHARD, L.
发明人
CHARLES, HARRY, K., JR.;FRANCOMACARO, ARTHUR, S.;EDWARDS, RICHARD, L.
