发明名称 |
Memory embedded semiconductor device and method for fabricating the same |
摘要 |
A memory embedded semiconductor device according to the present invention has a memory region having a memory transistor and a logic region having a logic transistor each provided in a common semiconductor substrate. The logic transistor has a gate electrode provided on the semiconductor substrate and source/drain diffusion layers formed in the semiconductor substrate each having a silicide film formed thereon. On the other hand, the memory transistor has a gate electrode provided on the semiconductor substrate and source/drain diffusion layers formed in the semiconductor substrate each having a silicide film formed thereon to be thinner than the silicide film formed on each of the source/drain diffusion layers of the logic transistor. |
申请公布号 |
US2005101076(A1) |
申请公布日期 |
2005.05.12 |
申请号 |
US20040979222 |
申请日期 |
2004.11.03 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAKABAYASHI TAKASHI |
分类号 |
H01L21/28;H01L21/8234;H01L21/8239;H01L21/8242;H01L21/8246;H01L27/088;H01L27/10;H01L27/105;H01L27/108;H01L27/112;H01L29/417;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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