Producing isolator thin film on substrate involves atom deposition of silicon atom layer on substrate, oxygen atom layer on silicon atom layer and atom deposition of metal-atom layer on substrate, oxygen atom layer on metal-atom layer

摘要

The method involves a first step of producing a silicon atom layer on the substrate (100) and an oxygen atom layer on the silicon atom layer and a second step of producing a metal-atom layer on the substrate and an oxygen atom layer on the metal-atom layer, whereby all the layers are produced by an atom deposition process. The concentration of metal atoms in the thin film is controlled by controlling the number of implementations of the first and second steps. An independent claim is also included for a method of manufacturing a semiconductor component including a step for producing an isolator thin film.