| 摘要 |
<P>PROBLEM TO BE SOLVED: To easily form contact holes in the same sizes which are arranged in various densities. <P>SOLUTION: A resist film is exposed by using a photomask which includes a first mask pattern arranged in high density, a second mask pattern arranged in low density, and a dummy pattern arranged near the second mask pattern, and in which pattern density which is almost equal to high density is formed by the second mask pattern and the dummy pattern. A resist film is developed and a contact hole pattern is formed. The opening size of the contact hole pattern is reduced. The reflow start temperature of a first resist film corresponding to a photomask region where the dummy pattern is formed is relatively dropped to be lower than the other second resist film. Only the first resist film is reflowed and a dummy contact hole pattern in the first resist film is extinguished. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
