| 摘要 |
PROBLEM TO BE SOLVED: To inexpensively manufacture a semiconductor device containing a high-withstand voltage insulated gate field effect transistor through a simple manufacturing process. SOLUTION: A drain region of the high-withstand voltage insulated gate field effect transistor (HVMOSFET) is constituted of a low-concentration drain region. In addition, a field oxide film is formed between the low-concentration drain region and a gate electrode. Moreover, the low-concentration drain region is formed by simultaneously doping the separating area of each transistor and the low-concentration drain region with an impurity element for separation and, at the same time, doping the low-concentration drain region with an opposite impurity element. COPYRIGHT: (C)2005,JPO&NCIPI
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