| 摘要 |
PROBLEM TO BE SOLVED: To facilitate the formation of two electrodes that have different work functions. SOLUTION: Regarding a manufacturing method for a semiconductor device including a first semiconductor structure having a dielectric layer and a first conductor and a second semiconductor structure having a dielectric layer and a second conductor, in which a part of the first conductor adjacent to the dielectric layer has a semiconductor body, whose work function is different from that of the corresponding part of the second conductor, a metallic layer is applied to the dielectric layer after the dielectric layer is applied to the semiconductor body, and then, a silicon layer is accumulated on this metallic layer, and further, the silicon layer and the metallic layer react to each other at the position of the first semiconductor structure, thus forming a metallic silicide. By etching layers other than the silicon layer, particularly metallic layers in one of the two semiconductor structures, these parts of the conductors having respective different work functions are formed, and in addition, other metallic layers are applied extending across the silicon layer and used to form other metallic silicides at the position of the second transistor. COPYRIGHT: (C)2005,JPO&NCIPI
|
