发明名称 Semiconductor device and method for manufacturing the same
摘要 It is a problem to realize, by a reduced number of processes than that of the conventional, a reliable active-matrix liquid crystal display device having a high opening ratio for high-definition display. The present invention is characterized by: forming a gate electrode and source and drain interconnections in the same process, forming a first insulating film covering the interconnections, forming an upper light-shielding film on the first insulating film, forming a second insulating film on the upper light-shielding film, partially etching the first and second insulating films to form a contact hole reaching the drain interconnection, and forming a pixel electrode on the second insulating film to connect to the drain interconnection. Meanwhile, a holding capacitance is formed by the upper light-shielding film, the second insulating film and the pixel electrode.
申请公布号 US2005101066(A1) 申请公布日期 2005.05.12
申请号 US20040996228 申请日期 2004.11.23
申请人 发明人 ARAO TATSUYA;TANADA YOSHIFUMI;SHIBATA HIROSHI
分类号 G02F1/1362;H01L21/77;H01L21/84;H01L27/12;H01L27/13;H01L29/786;(IPC1-7):H01L21/00 主分类号 G02F1/1362
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