| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive photoresist composition which solves the problems in a technique for improving proper performance of microphotofabrication using far-ultraviolet light, particularly ArF excimer laser light, and to provide a positive resist composition having a wide process window in contact hole and trench pattern formation and a pattern forming method which uses the same. <P>SOLUTION: The positive resist composition contains a resin (A), which has a carboxyl group in at least one end of a molecular chain, includes a repeating unit having an alicyclic lactone structure, and is decomposed by the action of an acid to increase solubility in an alkaline developing solution and a compound (B), which generates an acid upon irradiation with actinic rays or radiation. The pattern forming method uses the same. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
