发明名称 SWITCHING ELEMENT AND ITS MANUFACTURING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a switching element which materializes a bistable characteristic without scattering conductive fine particles in an organic bistable material. <P>SOLUTION: The switching element has two types of stable resistance value with respect to a voltage applied across electrodes, and a first electrode layer 21a. An organic bistable material layer 30 and a second electrode layer 21b are formed in this order on a substrate as a thin film. The organic bistable material layer 30 contains a functional group of electron-releasing properties and a functional group of electron-accepting properties in one molecule, and the surface roughness Ra of the organic bistable material layer 30 is 1.0 nm or more, and Ra is 70% or less of a film thickness of the organic bistable material layer 30. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005123394(A) 申请公布日期 2005.05.12
申请号 JP20030356551 申请日期 2003.10.16
申请人 FUJI ELECTRIC HOLDINGS CO LTD 发明人 KAWAKAMI HARUO;KATO HISATO
分类号 H01L51/50;H01L49/02;H01L51/00;H01L51/05;H05B33/14;(IPC1-7):H01L51/00 主分类号 H01L51/50
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