| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing method capable of reducing surface level difference by preventing the advance of dishing and erosion. <P>SOLUTION: The polishing method includes a first polishing step of polishing part of a conductor film, a second polishing step of polishing the conductor film until a barrier film is exposed, and a third polishing step of polishing the barrier film. In the second polishing step or in the first and second polishing steps, (a) a surfactant, (b) silicon oxide, (c) carbonic acid, (d) an anticorrosive, (e) an oxidant, and (f) a first polishing composition containing water are used. Alternately, (A)α-amino acid, (B) benzotriazole derivative, (C) silicon oxide, (D) a surfactant, (E) an oxidant, and (F) the first polishing composition containing water are used. On the other hand, in the third polishing step, (g) colloidal silica, (h) an acid, (i) an anticorrosive, (j) completely saponified polyvinyl alcohol, and (k) a second polishing composition containing water are used. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
