| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be reduced in manufacturing cost by reducing the number of masks, and also to provide its manufacturing method. SOLUTION: In manufacturing the semiconductor device, a semiconductor layer 3 including a source and a drain regions 10 and 11 and LDD regions 16 and 17, a gate insulation film 5, and a gate electrode 6 are formed, and a first and a second interlayer insulation films 24 and 25 are formed thereon. In the interlayer insulation films, contact holes 25a and 25c which are positioned above the source and drain regions respectively and an opening 25b which is positioned above the gate electrode and the LDD regions are formed. Within the opening, a second gate electrode 26b consisting of a transparent conductive film is so formed as to cover the gate electrode and the LDD regions, and a pixel electrode 26a is formed on the second interlayer insulation film. Then, the gate insulation film inside the contact holes is removed, and interconnections 27 and 28 connected to the source and drain regions respectively are formed. COPYRIGHT: (C)2005,JPO&NCIPI |
