| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing technique for a semiconductor device in which a gate insulating film is difficult to damage when a gate electrode is worked. SOLUTION: The gate insulating film 14 is formed on a semiconductor substrate 10, and a tantalum film 15 is formed on the gate insulating film 14. Patterned silicon oxide films 16 are formed on the tantalum film 15. The tantalum film 15 is dry-etched to a specified film thickness while using the silicon oxide films 16 as masks. The film 15 is dry-etched at an etching temperature of approximately 300°C or higher. The etching temperature is lowered from approximately 300°C to approximately 100°C, and a dry etching is conducted at a stage when the tantalum film 15 reaches the specified film thickness or less and begins to be partially isolated. COPYRIGHT: (C)2005,JPO&NCIPI
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