发明名称 |
Line edge roughness reduction for trench etch |
摘要 |
A method for etching a trench to a trench depth in a dielectric layer over a substrate is provided. An ARC is applied over the dielectric layer. A photoresist mask is formed on the ARC, where the photoresist mask has a thickness. The ARC is etched through. A trench is etched into the dielectric layer with a dielectric to photoresist etch selectivity between 1:1 and 2:1.
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申请公布号 |
US2005101126(A1) |
申请公布日期 |
2005.05.12 |
申请号 |
US20030712410 |
申请日期 |
2003.11.12 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
WAGGANER ERIC;ZHU HELEN H.;LE DANIEL;LOEWENHARDT PETER |
分类号 |
H01L;H01L21/311;H01L21/4763;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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