SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor light-emitting device is disclosed which has an improved light taking-out efficiency. A foundation layer (ALY) composed of GaN is formed on a sapphire substrate (SSB); a transfer layer (TLY) having a rough surface and composed of GaN is formed on the foundation layer (ALY); a light-absorbing layer (BLY) is formed on the rough surface of the transfer layer (TLY); a growth layer (4) composed of a planarization layer (CLY) and a light-emitting structure layer (DLY) including at least an active layer is formed on the light-absorbing layer (BLY); and a supporting substrate (2) is fixed thereto from the growth layer (4) side. The sapphire substrate (SSB) is irradiated with a double-frequency light (wavelength: 532 nm) of the YAG laser from the backside, so that the light-absorbing layer (BLY) is decomposed and the sapphire substrate (SSB) is separated, thereby exposing the planarization layer (CLY) having a rough surface as the light taking-out surface. Light emitted from the active layer in the growth layer (4) is radiated toward the outside of the device through the planarization layer (CLY) having a rough surface, thereby improving the light taking-out efficiency.