MASK, APPARATUS, AND METHOD FOR ELECTRON BEAM EXPOSURE

摘要

PROBLEM TO BE SOLVED: To provide a mask for electron beam exposure where kinds of patterns of exposure to a wafer by one shot of an electronic beam are increased.

SOLUTION: In the electron beam exposure apparatus for carrying out the exposure of the patterns to the wafer by the electronic beam, the mask for electronic beam exposure which forms the shape of the cross section of the electronic beam has an exposure mask pattern which is formed in a first rectangular block area having nearly the same area as the cross section of the electronic beam at the mask for electronic beam exposure and which is an opening of a pattern shape to be formed on the wafer as the result of irradiating of the whole or a part of the first block area with the electronic beam, and a first measuring pattern which is formed near the first block area and which is for measuring the irradiation position with the electronic beam to the first block area in the case of irradiating a part of the first block area with the electronic beam.

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