| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device incorporating a function by which the number of times of data erasing for each subblock is controlled, and provide an electronic device using it. <P>SOLUTION: This nonvolatile semiconductor memory device includes a cell array in which nonvolatile memory cells being electrically rewritable are arranged, while they are divided into a plurality of sub-blocks and each block is constituted of one or a continued plurality of pages; and a controller for controlling data erasing with a sub-block unit of the cell array, the each sub-block of the cell array stores the number of times of data erasing updated for each data erasing of the sub-block, and the number of times of data erasing is restricted for each subblock referring to the tolerable maximum value of the number of times of data erasing stored by the prescribed block of the cell array. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
