| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching method capable of satisfactorily etching a fluorocarbon film without damaging other films afterwards. SOLUTION: Etching is performed for a substrate whereon a fluorocarbon film, a hard mask for instance an SiCN film, and a resist film pattern are sequentially laminated. Plasma of a CxFy gas (with x and y each being a natural number) for instance CF<SB>4</SB>gas and a noble gas for instance argon gas is applied for etching the hard mask and the fluorocarbon film. In this process, for instance, the exposed part of the hard mask is not totally etched, with a thin film thereof retained unetched. The resist film is etched next, and then etching may be restarted. By using this method, oxygen plasma during the resist film etching process does not land on the fluorocarbon film. COPYRIGHT: (C)2005,JPO&NCIPI
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