发明名称 FERROELECTRIC FILM, MANUFACTURING METHOD THEREOF, FERROELECTRIC CAPACITOR AND FERROELECTRIC MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a ferroelectric film having sufficient crystal quality, and to provide the ferroelectric film obtained by the manufacturing method. SOLUTION: The manufacturing method of the ferroelectric film includes a process for electro-depositing particles of a first ferroelectric material to an electrode by a hydrothermal electrodeposition method, and forming a ferroelectric initial nuclear layer 54; a process for charging particles of a second ferroelectric material; a process for electro-depositing the charged particles of the second ferroelectric material to the ferroelectric initial nuclear layer 54 by a migration electrodeposition method, and forming a ferroelectric material film 50; and a process for thermally treating the ferroelectric material film 50. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005123310(A) 申请公布日期 2005.05.12
申请号 JP20030355046 申请日期 2003.10.15
申请人 SEIKO EPSON CORP 发明人 KIJIMA TAKESHI
分类号 C04B41/87;G11C8/02;G11C11/22;H01L21/31;H01L21/316;H01L21/82;H01L21/822;H01L21/8246;H01L27/04;H01L27/10;H01L27/105;H01L27/115;(IPC1-7):H01L21/822 主分类号 C04B41/87
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