发明名称 SUBSTRATE PROCESSOR
摘要 PROBLEM TO BE SOLVED: To keep thermal hysteresis between wafers constant irrespective of the number of processed wafers. SOLUTION: A substrate processor is provided with a reaction chamber 204 where the wafer 200 is processed under an atmosphere where a temperature is controlled by a heater 207, a conveyance chamber 103 which is arranged adjacently to the reaction chamber and conveys the wafer 200 to the reaction chamber 204 and a temperature sensor in a furnace 211, and a temperature sensor in conveyance room 213 which measure inner temperatures of the reaction chamber 204 and the conveyance chamber 103. A controller 220 monitors a temperature difference (differential temperature) between the reaction chamber 204 and the conveyance chamber 103, obtained by a differential temperature operation part 222; and a measurement value (called as correction temperature in the following) of the reaction chamber temperature sensor 211 with respect to the number of processed wafers, obtained by a correction temperature operation part 223 at a momentary point in conveying the wafer 200 by a transfer machine 112. In controlling the temperature by a control temperature operation part 221 of the reaction chamber 204, correction is controlled so that adders 225 and 226 add a temperature obtained by adding the correction temperature to the differential temperature. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005123308(A) 申请公布日期 2005.05.12
申请号 JP20030354937 申请日期 2003.10.15
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 MAKITANI MASAHIRO
分类号 H01L21/677;H01L21/205;H01L21/22;H01L21/68;(IPC1-7):H01L21/205 主分类号 H01L21/677
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