| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a film which has no seam and can improve etching tolerance. SOLUTION: In the film forming method wherein a thin film is deposited on a surface of a workpiece W, an SiO<SB>2</SB>film forming process for forming an SiO<SB>2</SB>film on the surface of the workpiece, and a reforming process wherein annealing treatment of the SiO<SB>2</SB>film is performed in atmosphere in which oxygen active species and hydroxyl group active species are made principal in order to improve film quality of the SiO<SB>2</SB>film, are installed. In the above method, annealing treatment of the SiO<SB>2</SB>film formed on the surface of the workpiece is performed in the atmosphere in which oxygen active species and hydroxyl group active species are made principal, and reforming is performed so that there is no seam in the SiO<SB>2</SB>film, and further, etching tolerance of the SiO<SB>2</SB>film can be improved. COPYRIGHT: (C)2005,JPO&NCIPI
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