发明名称 RF coil design for improved film uniformity of an ion metal plasma source
摘要 The present disclosure provides a system and method for providing improved film uniformity from an ion metal plasma source. The system includes a deposition chamber and a coil. The coil is comprised of a first metal and includes opposite terminal ends disposed within the deposition chamber. At least one of the opposite terminal ends of the coil is angled less than ninety degrees.
申请公布号 US2005098427(A1) 申请公布日期 2005.05.12
申请号 US20030706565 申请日期 2003.11.11
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHO JUI-MU;YANG WEN-CHENG;YANG WEN-JUNG;LO Y-CHIH;HUANG TAY-LANG;HSIEH TE-HUNG
分类号 C23C14/34;H01J37/32;(IPC1-7):C23C14/34 主分类号 C23C14/34
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