发明名称 |
Semiconductor device having overcurrent protection function and data setting method thereof |
摘要 |
In a driving device ( 20 ) for driving an IGBT ( 1 ), a current measuring portion ( 22 ) measures a main current amount flowing through the IGBT ( 1 ). When the main current amount measured by the current measuring portion ( 22 ) reaches a predetermined reference level, a protection circuit portion ( 23 ) limits the main current at the IGBT ( 1 ) to protect it. A temperature measuring portion ( 24 ) measures the temperature of the IGBT ( 1 ). The control portion ( 25 ) adjusts the aforementioned reference level based on the temperature of the IGBT ( 1 ) measured by the temperature measuring portion ( 24 ). A control portion ( 35 ) stores setting values of the reference level as data.
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申请公布号 |
US2005099751(A1) |
申请公布日期 |
2005.05.12 |
申请号 |
US20040862627 |
申请日期 |
2004.06.08 |
申请人 |
RENESAS DEVICE DESIGN CORP. |
发明人 |
KUMAGAI TOSHIYUKI |
分类号 |
H02H3/08;H02M1/00;H02M1/08;H03K17/08;H03K17/082;H03K17/14;H03K17/56;(IPC1-7):H02H3/00 |
主分类号 |
H02H3/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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