发明名称 |
Insulated gate field effect semiconductor devices and method of manufacturing the same |
摘要 |
An LDD structure is manufactured to have a desired aspect ratio of the height to the width of a gate electrode. The gate electrode is first deposited on a semiconductor substrate followed by ion implantation with the gate electrode as a mask to form a pair of impurity regions. The gate electrode is then anodic oxidized to form an oxide film enclosing the electrode. With the oxide film as a mask, highly doped regions are formed by ion implantation in order to define lightly doped regions between the highly doped regions and the channel region located therebetween.
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申请公布号 |
US2005098782(A1) |
申请公布日期 |
2005.05.12 |
申请号 |
US20040939969 |
申请日期 |
2004.09.14 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;TAKEMURA YASUHIKO;ZHANG HONGYONG |
分类号 |
H01L29/78;G02F1/1362;H01L21/265;H01L21/336;H01L21/60;H01L21/77;H01L21/84;H01L27/12;H01L29/04;H01L29/49;H01L29/786;(IPC1-7):H01L29/04;H01L29/10;H01L31/036;H01L31/037 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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