发明名称 |
Photolithography method for reducing effects of lens aberration |
摘要 |
A photolithography method for reducing effects of lens aberration. A photolithography apparatus is provided with a first reticle therein, having at least one first rectangular pattern thereon, a first photolithography is performed on a wafer by the photolithography apparatus to transfer the first rectangular pattern thereonto by simultaneously moving the first reticle and the wafer in a direction parallel to the short sides of the first rectangular pattern. The first reticle is replaced with a second reticle having at least one second rectangular pattern thereon and a second photolithography is performed by the photolithography apparatus to transfer the second rectangular pattern onto the wafer by simultaneously moving the second reticle and the wafer in a 90° plus or minus rotation in a direction parallel to the short sides of the second rectangular pattern.
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申请公布号 |
US2005100827(A1) |
申请公布日期 |
2005.05.12 |
申请号 |
US20030640095 |
申请日期 |
2003.08.13 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
LIAO CHUN-CHENG;WU YUAN-HSUN |
分类号 |
G03F7/20;(IPC1-7):G03C5/00 |
主分类号 |
G03F7/20 |
代理机构 |
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