发明名称 Photolithography method for reducing effects of lens aberration
摘要 A photolithography method for reducing effects of lens aberration. A photolithography apparatus is provided with a first reticle therein, having at least one first rectangular pattern thereon, a first photolithography is performed on a wafer by the photolithography apparatus to transfer the first rectangular pattern thereonto by simultaneously moving the first reticle and the wafer in a direction parallel to the short sides of the first rectangular pattern. The first reticle is replaced with a second reticle having at least one second rectangular pattern thereon and a second photolithography is performed by the photolithography apparatus to transfer the second rectangular pattern onto the wafer by simultaneously moving the second reticle and the wafer in a 90° plus or minus rotation in a direction parallel to the short sides of the second rectangular pattern.
申请公布号 US2005100827(A1) 申请公布日期 2005.05.12
申请号 US20030640095 申请日期 2003.08.13
申请人 NANYA TECHNOLOGY CORPORATION 发明人 LIAO CHUN-CHENG;WU YUAN-HSUN
分类号 G03F7/20;(IPC1-7):G03C5/00 主分类号 G03F7/20
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