Method for manufacturing semiconductor device e.g. insulated gate semiconductor device, involves baking semiconductor at given temperature in gaseous atmosphere

摘要

A method for manufacturing a semiconductor device having an insulated gate structure, which includes a gate insulation layer between a semiconductor and a gate electrode. The gate insulation layer contacts the semiconductor. Initially, the semiconductor is baked at a temperature (T) of 980 -1150 Deg.C in a gas mixture atmosphere, containing hydrogen (1.3x10e-18 exp.(0.043T)%) or less, and a noble gas such that the surface of a gas insulation layer-forming zone of the semiconductor, is designed, in which the gate insulation layer should be formed and the concave edges are rounded off in the surface of the semiconductor before forming the gate insulation layer in the gate insulation layer-forming zone.