| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide cerium oxide slurry and liquid additive for CMP abrasive for use in a planarization process of a substrate surface, which process being capable of polishing a surface to be polished such as a silicon oxide film or a silicon nitride film without contaminating the surface to be polished with alkaline metal such as a sodium ion as well as without damaging and being excellent in preservation stability, and more particularly, for use in a planarization process of an interlayer dielectric, a formation process of shallow trench isolation, and the like. <P>SOLUTION: The cerium oxide slurry containing cerium oxide particles, dispersant, and water, and the liquid additive containing dispersant and water are used in a polishing method of a substrate, the method being pressurized by pushing the substrate formed with a film to be polished to a polishing cloth of a polishing platen and polishing the film to be polished by moving the substrate and the polishing platen while CMP abrasive is supplied between the film to be polished and the polishing cloth, wherein the CMP abrasive are separately arranged with the cerium oxide slurry containing cerium oxide particles, dispersant, and water, and the liquid additive containing dispersant and water; and both are mixed and prepared in polishing. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
