| 摘要 |
PROBLEM TO BE SOLVED: To enable a MOS transistor using a gate insulating film made of hafnium silicate to be operated more stably, or enable a MOS transistor using a gate electrode made of metal silicate to be operated more stably. SOLUTION: Hafnium silicate is deposited on the main surface of a silicon substrate 101 at a process pressure of 100 Pa by a chemical vapor deposition method using TDEAH (tetrakis diethyl-amido hafunium) as a hafnium source gas, using TDMAS (tetrakis dimethyl-amido silicon) as a silicon source gas, and using an oxygen gas as an oxygen supply source, to thereby form an insulating film 102. Subsequently, the process pressure is changed to a relatively high pressure 800 Pa, and the deposition is continued to form a gate insulating film 103. COPYRIGHT: (C)2005,JPO&NCIPI
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