| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method which improve the alignment accuracy of lithography to form an opening region at an insulating film between two-layer gates, and contributes to the downsizing of a chip and the reduction of a cost. SOLUTION: The semiconductor device includes a nonvolatile memory cell of a stack gate structure formed by laminating a polysilicon film 103 used as a floating gate and a polysilicon film 113 used as a control gate on a semiconductor substrate 101, and transistors other than the memory cell in which the control gate and the floating gate laminated and formed on the semiconductor substrate 101 as specified above are electrically connected to each other. In the transistors other than the memory cell, conductor films 131, 132, 133 are embedded in a contact hole provided so that the hole may reach the upper face of the polysilicon film 103 from the upper face of the polysilicon film 113. COPYRIGHT: (C)2005,JPO&NCIPI
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