| 摘要 |
PROBLEM TO BE SOLVED: To decrease the quantity of saturation-signal charges of a sensor by the reduction of the volume of a signal-charge storage region because a p-type well region reduces the volume of the signal-charge storage region when a sensor structure is adopted in which a p-type semiconductor region on the surface of the sensor and the p-type well region under an element isolation layer are overlapped. SOLUTION: In a solid state image sensing device adopting a HAD sensor structure having the p-type semiconductor region 34 on the surface of a sensor, second semiconductor regions 37 are formed near the boundaries of photodiodes 21 and the element isolation layers 35, and a dark current generated among the photodiodes 21 and the element isolation layers 35, and a white-point defect resulting from the dark current is inhibited by the working of the semiconductor regions 37. Consequently, the reduction of the volume of the n-type semiconductor region 33 (the signal-charge storage region) is decreased, and the reduction of the quantities of the saturation-signal charges of the photodiodes 21 is inhibited minimally. COPYRIGHT: (C)2005,JPO&NCIPI
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