发明名称 Design of an insulated cavity
摘要 The invention relates to a method for connecting a connecting surface of a first silicon wafer [WA 1 ] with a connecting surface of a second silicon wafer [WA 2 ] so as to form an insulated cavity after assembly, at least one of the two silicon wafers [WA] including at least one functional area [DA] intended to be within the cavity. The method according to the invention includes a step [PLTS] of depositing alloy soldering bumps [PLTC] on the connecting surface of the first silicon wafer [WA 1 ], said bumps [PLTC] being separated from one another by an even distance which is sufficiently small to cause joinings during the assembly of the two silicon wafers. Said step [PLTS] of depositing the soldering bumps [PLTE] is carried out during the step of depositing the soldering bumps [PLTE] intended for the electrical contacts. The method includes a reflux soldering step [RFX] for assembling the two silicon wafers by melting of the alloy soldering bumps. Application: Protection of semiconductor elements sensitive to the external conditions.
申请公布号 US2005098612(A1) 申请公布日期 2005.05.12
申请号 US20040507332 申请日期 2004.09.10
申请人 SIX JEAN-CLAUDE 发明人 SIX JEAN-CLAUDE
分类号 H01L25/18;H01L21/60;H01L23/20;H01L23/522;H01L25/065;H01L25/07;H03H3/007;H03H9/10;(IPC1-7):B23K31/02 主分类号 H01L25/18
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