发明名称 Semiconductor manufacturing apparatus
摘要 When inactive gas of which flow rate is controllable is introduced into each processing chamber, the flow rate of the inactive gas is measured by a flow meter, and a computing unit operates computation of the flow rate of the gas to be flown into a processing chamber and the pressure value of the processing chamber, and an appropriate process time (purging time) required for stabilizing the atmosphere/discharging floating foreign particles is set, so that adherence of foreign particles onto the substrate to be processed can be prevented by constantly controlling the time, flow rate and pressure throughout the process.
申请公布号 US2005097730(A1) 申请公布日期 2005.05.12
申请号 US20040969056 申请日期 2004.10.21
申请人 MATSUSHITA ELEC. IND. CO. LTD. 发明人 YAMAMOTO ATSUSHI;TAKAMORI YOSHINORI
分类号 H01L21/3065;B23P19/00;G01M3/04;H01J37/32;H01L21/00;(IPC1-7):G01M3/04 主分类号 H01L21/3065
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