| 发明名称 |
Process for producing single-crystal gallium nitride |
| 摘要 |
A process for producing single-crystal gallium nitride comprising the steps of performing congruent melting of gallium nitride at a high pressure between 6x10<SUP>4 </SUP>atm. and 10x10<SUP>4 </SUP>atm. and at a high temperature between 2,200° C. and 2,500° C. and then slowly cooling the obtained gallium nitride melt at the stated high pressure.
|
| 申请公布号 |
US2005098089(A1) |
申请公布日期 |
2005.05.12 |
| 申请号 |
US20040892131 |
申请日期 |
2004.07.16 |
| 申请人 |
JAPAN ATOMIC ENERGY RESEARCH INSTITUTE |
发明人 |
UTSUMI WATARU;SAITOH HIROYUKI;AOKI KATSUTOSHI |
| 分类号 |
B01J3/06;C01B21/06;C30B1/00;C30B11/02;C30B29/38;C30B29/40;H01L29/22;(IPC1-7):C30B1/00;H01L33/00 |
主分类号 |
B01J3/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
