| 摘要 |
A memory device comprises a memory first MOSFET, a resistive element, and a second MOSFET. Memory cells are arranged in a matrix. Each cell is connected to a word line and a bit line and has a memory capacitor. The first MOSFET is fabricated on a substrate, the source region is connected to the bit line, the gate electrode is connected to the word line, and the drain region is connected to the memory capacitor. The second MOSFET has a channel region electrically insulated from the substrate. The source region of the second MOSFET is connected to a first potential through the resistive element, and to the drain region of the first MOSFET. The gate electrode of the second MOSFET is connected to a second potential, and the drain thereof is connected to a third potential.
|
