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发明名称
METHOD FOR FORMING THE ISOLATION LAYER BY INJECTIONING AN ION
摘要
申请公布号
KR20050043267(A)
申请公布日期
2005.05.11
申请号
KR20030078102
申请日期
2003.11.05
申请人
HYNIX SEMICONDUCTOR INC.
发明人
PARK, SEUNG PYO
分类号
H01L21/762;(IPC1-7):H01L21/762
主分类号
H01L21/762
代理机构
代理人
主权项
地址
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