发明名称
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing system which is capable of processing a work at a higher speed and lessening charge-up damage inflicted on a work by a method wherein a large amount of negative ions are generated and made to impinge on the work. SOLUTION: Gas which contains halogen such as fluorine, chlorine, bromine, iodine or the like is introduced into a plasma generating space 102 through a first gas inlet 104, microwaves are supplied by a microwave power supply 101 to generate plasma 113 in the space 102. Then, at least gas selected out of halogen gas and inert gas is supplied into a processing chamber 105 through a second gas inlet 106. The plasma 113 is guided to a negative ion generating space 114 in the processing chamber 105 and mixed with gas lower than the plasma 113 in temperature to generate negative ions. Negative ions extracted from the plasma are made to impinge on a work 110.
申请公布号 JP3647303(B2) 申请公布日期 2005.05.11
申请号 JP19990074937 申请日期 1999.03.19
申请人 发明人
分类号 H01L21/302;C23F4/00;H01J27/02;H01J37/08;H01J37/305;H01L21/3065;H05H1/46 主分类号 H01L21/302
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