Ferroelectric capacitor having upper electrode lamination and manufacure thereof

摘要

A ferroelectric capacitor adapted for a non-volatile semiconductor memory comprises a base substrate with an insulating surface (12), such as a semiconductor substrate formed with semiconductor elements and having a top insulator film (12), a lower electrode (20) formed on the insulating surface, an oxide ferroelectric layer (30) such as PET formed on the lower electrode, a first oxide upper electrode (41) formed on and in contact with the upper surface of the oxide ferroelectric layer, and a second oxide upper electrode (42) formed on the first oxide upper electrode, wherein one of the first and second oxide upper electrodes comprises SRO (SrRuOx) that contains at least 0.1at% additive and the other of the first and second oxide upper electrodes comprises IrOx. In another embodiment SRO is replaced by CaRuOx or LaRuOx. In yet another embodiment SRO is replaced by LaNiOx or (La,Sr)COx.