| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin film transistor in which electric characteristics, e.g. off current characteristics, can be enhanced and a fabrication method thereof. SOLUTION: The thin film transistor 110 has an n<-> source region 112 of about 400Ån<-> silicon film (lightly doped region) a source region 112 and an n<-> drain region 113 wherein the lightly doped region and a gate electrode are overlapped. The gate electrode 116 is a metal electrode being formed after formation of the n<-> source region 112 and the n<-> drain region 113 wherein the gate electrode 116, the n<-> source region 112 and the n<-> drain region 113 are self-aligned.</p> |
