发明名称 CHEMICALLY AMPLIFIED POSITIVE PHOTO RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
摘要 <p>A chemically amplified positive photo resist composition which comprises an organic solvent and, dissolved therein, a resin being prepared through the reaction of a novolac resin or a hydroxystyrene resin with a crosslinking agent, being slightly soluble or insoluble in an alkaline aqueous solution and exhibiting enhanced solubility into an aqueous alkali solution in the presence of an acid, and (B) a compound generating an acid by the irradiation with a radiation, wherein it contains an acid component in a amount of 10 ppm or less. The chemically amplified positive photo resist composition can form a resist exhibiting good storage stability as a resist solution in a bottle.</p>
申请公布号 KR20050043915(A) 申请公布日期 2005.05.11
申请号 KR20057002750 申请日期 2005.02.18
申请人 TOKYO OHKA KOGYO CO., LTD 发明人 DOI, KOUSUKE;KURIHARA, MASAKI;MARUYAMA, KENJI;MASUJIMA, MASAHIRO;MIYAGI, KEN;NIIKURA, SATOSHI;NITTA, KAZUYUKI;SHIMATANI, SATOSHI;YAMAGUCHI, TOSHIHIRO
分类号 G03C1/492;G03F7/039;(IPC1-7):G03F7/039 主分类号 G03C1/492
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