发明名称 Diffusion system
摘要 Provided is a diffusion system for forming a doping layer in a wafer. The diffusion system includes a bubbler for generating a doping gas; a premixer, which premixes the doping gas with reactive gases and preheats the gas mixture; a main chamber, in which the gas mixture reacts to the wafer; a buffer case, which externally isolates an exhaust port and a door for loading and unloading the wafer into and out or the main chamber; and a used gas exhaustion system, which exhausts a used gas after the reaction is finished in the main chamber. <IMAGE>
申请公布号 EP1529855(A2) 申请公布日期 2005.05.11
申请号 EP20040255090 申请日期 2004.08.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, JUN-YOUNG,;CHOI, BYOUNG-IYONG,;LEE, EUN-KYUNG,
分类号 H01L21/223;C23C8/06;C23C16/44;C23C16/448;C23C16/452;C23C16/54;C30B31/06;C30B31/10;C30B31/16;C30B35/00;H01L21/22;(IPC1-7):C30B31/06 主分类号 H01L21/223
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