发明名称 Method of formation of a capacitor with a solid electrolyte layer comprising an organic semiconductor, and method of production of circuit board
摘要 A method of formation of a capacitor forming part of an electric circuit when producing a circuit board, consisting of forming a valve metal bottom electrode layer and a valve metal oxide dielectric layer on the same, then integrally forming a solid electrolyte layer comprised of an organic semiconductor and a top electrode layer comprised of metal on the same, this integral formation step consisting of the step of holding one surface of metal foil for the top electrode at a bonding wedge and making the other surface of the metal foil carry a powder of the organic semiconductor by compression bonding and heating and the step of compression bonding the organic semiconductor powder carried by compression bonding at the dielectric layer by a bonding wedge through metal foil, whereby a solid electrolyte layer comprised of an organic semiconductor sandwiched between the metal foil and dielectric layer and closely bonded with the two is formed, a capacitor built into a circuit board, a circuit board including a capacitor, and a method of production of the circuit board.
申请公布号 US6890792(B2) 申请公布日期 2005.05.10
申请号 US20030645478 申请日期 2003.08.22
申请人 SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 KOIKE HIROKO;MOCHIZUKI TAKASHI;HIGASHI MITSUTOSHI
分类号 H05K1/16;H01G4/33;H01G9/00;H01G9/15;H01L21/20;H01L21/48;H01L21/8242;H01L23/498;H01L51/40;H05K3/30;H05K3/46;(IPC1-7):H01L51/40 主分类号 H05K1/16
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