发明名称 |
Method of formation of a capacitor with a solid electrolyte layer comprising an organic semiconductor, and method of production of circuit board |
摘要 |
A method of formation of a capacitor forming part of an electric circuit when producing a circuit board, consisting of forming a valve metal bottom electrode layer and a valve metal oxide dielectric layer on the same, then integrally forming a solid electrolyte layer comprised of an organic semiconductor and a top electrode layer comprised of metal on the same, this integral formation step consisting of the step of holding one surface of metal foil for the top electrode at a bonding wedge and making the other surface of the metal foil carry a powder of the organic semiconductor by compression bonding and heating and the step of compression bonding the organic semiconductor powder carried by compression bonding at the dielectric layer by a bonding wedge through metal foil, whereby a solid electrolyte layer comprised of an organic semiconductor sandwiched between the metal foil and dielectric layer and closely bonded with the two is formed, a capacitor built into a circuit board, a circuit board including a capacitor, and a method of production of the circuit board.
|
申请公布号 |
US6890792(B2) |
申请公布日期 |
2005.05.10 |
申请号 |
US20030645478 |
申请日期 |
2003.08.22 |
申请人 |
SHINKO ELECTRIC INDUSTRIES CO., LTD. |
发明人 |
KOIKE HIROKO;MOCHIZUKI TAKASHI;HIGASHI MITSUTOSHI |
分类号 |
H05K1/16;H01G4/33;H01G9/00;H01G9/15;H01L21/20;H01L21/48;H01L21/8242;H01L23/498;H01L51/40;H05K3/30;H05K3/46;(IPC1-7):H01L51/40 |
主分类号 |
H05K1/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|