Nitride semiconductor laser element and optical device containing it

摘要

A nitride semiconductor light emitting device includes a processed substrate ( 101 a) including a groove and a hill formed on a main surface of a nitride semiconductor substrate, a nitride semiconductor underlayer ( 102 ) covering the groove and the hill of the processed substrate, and a light emitting device structure having a light emitting layer ( 106 ) including a quantum well layer or a quantum well layer and a barrier layer in contact with the quantum well layer between an n type layer ( 103-105 ) and a p type layer ( 107-110 ) over the nitride semiconductor underlayer. A current-constricting portion of the light emitting device structure is formed above a region more than 1 mum away from the center of the groove in the width direction and more than 1 mum away from the center of the hill in the width direction.