发明名称 Semiconductor device and method of manufacturing the same
摘要 A semiconductor device having regions for forming a plurality of functional blocks and a region for forming wiring layers for connecting the functional blocks, wherein each of the regions for forming the functional blocks includes a multilayer wiring, and the region for forming the wiring layers for connecting adjacent functional blocks includes a coaxial line comprised of a signal line and a ground line surrounding the signal line via an insulating film.
申请公布号 US6891261(B2) 申请公布日期 2005.05.10
申请号 US20010986051 申请日期 2001.11.07
申请人 SHARP KABUSHIKI KAISHA 发明人 AWAYA NOBUYOSHI
分类号 H01L23/52;H01L21/3205;H01L21/768;H01L21/82;H01L23/522;(IPC1-7):H01L23/48;H01L29/00;H01L29/40 主分类号 H01L23/52
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