发明名称 |
Varactors for CMOS and BiCMOS technologies |
摘要 |
Varactors are provided which have a high tunability and/or a high quality factor associated therewith as well as methods for fabricating the same. One type of varactor disclosed is a quasi hyper-abrupt base-collector junction varactor which includes a substrate having a collector region of a first conductivity type atop a subcollector region, the collector region having a plurality of isolation regions present therein; reach-through implant regions located between at least a pair of the isolation regions; a SiGe layer atop a portion of the substrate not containing a reach-through implant region, the SiGe layer having an extrinsic base region of a second conductivity type which is different from the first conductivity type; and an antimony implant region located between the extrinsic base region and the subcollector region. Another type of varactor disclosed is an MOS varactor which includes at least a poly gate region and a well region wherein the poly gate region and the well region have opposite polarities.
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申请公布号 |
US6891251(B2) |
申请公布日期 |
2005.05.10 |
申请号 |
US20020323022 |
申请日期 |
2002.12.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COOLBAUGH DOUGLAS D.;DUNN JAMES S.;GORDON MICHAEL D.;HAMMAD MOHAMMED Y.;JOHNSON JEFFREY B.;SHERIDAN DAVID C. |
分类号 |
H01L21/8222;H01L27/08;H01L29/93;H01L29/94;(IPC1-7):H01L29/93 |
主分类号 |
H01L21/8222 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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