| 发明名称 |
Magneto-resistive device having soft reference layer |
| 摘要 |
A magneto-resistive device includes first and second ferromagnetic layers having different coercivities, and a spacer layer between the first and second layers. Each ferromagnetic layer has a magnetization that can be oriented in either of two directions.
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| 申请公布号 |
US6891746(B2) |
申请公布日期 |
2005.05.10 |
| 申请号 |
US20030351013 |
申请日期 |
2003.01.25 |
| 申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
TRAN LUNG T.;SHARMA MANISH |
| 分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/14 |
主分类号 |
G11C11/15 |
| 代理机构 |
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