| 摘要 |
Photo-sensitive element for electro-optical sensors realised with the CMOS technology, comprising a photo-sensitive reception member ( 11, 31 ) consisting of a diode connected to a conversion circuit to convert the current generated by the photo-sensitive reception member ( 11, 31 ) into a tension signal, and an amplification and reading circuit ( 20, 40 ). The circuit comprises two transistors ( 21, 22; 41, 42 ), arranged in a diode configuration with the drain short-circuited with its own gate, the two transistors ( 21, 22; 41, 42 ) being connected in series there between and able to perform a logarithmic conversion of the current, photo-generated by the reception member ( 11, 31 ), in continuous time and without requiring time to integrate the light. The photo-sensitive element further comprises a third transistor ( 23, 43 ) having its gate connected to a photo-sensitive node ( 25, 45 ) at an output of the photo-diode ( 11, 31 ) to achieve a first stage of amplification in current of the signal by transferring the tension present on the node ( 25, 45 ) to the drain of a fourth transistor ( 24, 44 ).
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