发明名称 Integrated thin film capacitor/inductor/interconnect system and method
摘要 A system and method for the fabrication of high reliability capacitors ( 1011 ), inductors ( 1012 ), and multi-layer interconnects ( 1013 ) (including resistors ( 1014 )) on various thin film hybrid substrate surfaces ( 0501 ) is disclosed. The disclosed method first employs a thin metal layer ( 0502 ) deposited and patterned on the substrate ( 0501 ). This thin patterned layer ( 0502 ) is used to provide both lower electrodes for capacitor structures ( 0603 ) and interconnects ( 0604 ) between upper electrode components. Next, a dielectric layer ( 0705 ) is deposited over the thin patterned layer ( 0502 ) and the dielectric layer ( 0705 ) is patterned to open contact holes ( 0806 ) to the thin patterned layer. The upper electrode layers ( 0907, 0908, 1009, 1010 ) are then deposited and patterned on top of the dielectric ( 0705 ).
申请公布号 US6890629(B2) 申请公布日期 2005.05.10
申请号 US20030686128 申请日期 2003.10.15
申请人 CASPER MICHAEL D.;MRAZ WILLIAM B. 发明人 CASPER MICHAEL D.;MRAZ WILLIAM B.
分类号 B05D5/12;B32B3/00;B32B15/00;H01K1/00;H01L27/01;H01L29/00;H05K1/16;H05K3/46;(IPC1-7):B32B3/00 主分类号 B05D5/12
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