| 摘要 |
A semiconductor laser device is characterized in that an angle theta of inclination formed by the side surfaces of a ridge portion and a lower part of the ridge portion is at least 70° and not more than 117°, a p-type cladding layer is made of Al<SUB>X1</SUB>Ga<SUB>1-X1</SUB>As, a first current blocking layer is made of Al<SUB>X2</SUB>Ga<SUB>1-X2</SUB>As, the distance between an emission layer and the first current blocking layer satisfies the relation of t<=0.275/(1-(X2-X1)) assuming that t represents the distance, and a lower width W of the ridge portion is at least 2 mum and not more than 5 mum.
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