发明名称 |
Very low dielectric constant plasma-enhanced CVD films |
摘要 |
The present invention provides a method for depositing nano-porous low dielectric constant films by reacting a mixture comprising an oxidizable silicon component and an oxidizable component having thermally labile groups with an oxidizing gas in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures.
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申请公布号 |
US6890639(B2) |
申请公布日期 |
2005.05.10 |
申请号 |
US20020091699 |
申请日期 |
2002.03.04 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
MANDAL ROBERT P. |
分类号 |
H01L21/768;C23C16/40;C23C16/56;H01L21/205;H01L21/316;H01L23/522;(IPC1-7):B32B3/26;H01L21/302 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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