摘要 |
A semiconductor device using a TFT structure with high reliability is realized. As an insulating film used for the TFT, for example, a gate insulating film, a protecting film, an under film, an interlayer insulating film, or the like, a silicon nitride oxide film (SiN<SUB>X</SUB>B<SUB>Y</SUB>O<SUB>z</SUB>) containing boron is formed by a sputtering method. As a result, the internal stress of this film becomes -5x10<SUP>10 </SUP>dyn/cm<SUP>2 </SUP>to 5x10<SUP>10 </SUP>dyn/cm<SUP>2</SUP>, preferably -10<SUP>10 </SUP>dyn/cm<SUP>2 </SUP>to 10<SUP>10 </SUP>dyn/cm<SUP>2</SUP>, and the film has high thermal conductivity, so that it typically becomes possible to prevent deterioration due to heat generated at the time of an on operation of the TFT.
|