发明名称 |
Method for repairing a phase shift mask and a focused ion beam apparatus for carrying out method |
摘要 |
A method is provided for repairing a phase shift mask. The phase shift mask has a substrate and a shifter containing a defect and disposed on the substrate. An ion beam is irradiated onto the defect while a region of the shifter that includes the defect is supplied with a first gas containing silicon, an oxidizing second gas, and a third gas for controlling an amount of ions from the ion beam which penetrate the region of the shifter to form a silicon thin film on the defect and thereby repair the phase shift mask.
|
申请公布号 |
US6891171(B1) |
申请公布日期 |
2005.05.10 |
申请号 |
US20020959834 |
申请日期 |
2002.02.12 |
申请人 |
SII NANOTECHNOLOGY INC. |
发明人 |
HAGIWARA RYOJI;KOYAMA YOSHIHIRO |
分类号 |
G03F1/00;H01J37/305;(IPC1-7):H01J37/305 |
主分类号 |
G03F1/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|